| PART |
Description |
Maker |
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| E28F016XD-85 |
16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
|
PROM
|
| PM39F010 PM39F010-55JCE PM39F010-55PCE PM39F010-70 |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
|
PMC[PMC-Sierra, Inc]
|
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| HYB39L256160AC-7.5 HYB39L256160AT-7.5 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| HYB39S16800CT-8 HYB39S16800CT-10 HYB39S16400CT-10 |
16 MBit Synchronous DRAM
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HYB39S64800AT-10 HYB39S64800AT-8 HYB39S64800AT-8B |
64 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
|
| HYI39S128160F |
128-MBit Synchronous DRAM
|
Qimonda
|
| HYB39SC256160FE-6 HYB39SC256160FE-7 HYB39SC256160F |
256-MBit Synchronous DRAM
|
Qimonda AG
|
