| PART |
Description |
Maker |
| K7A803600M K7A801800M |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DSK7A803600B K7A803600B K7A801800B DS_K7A803600B |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7A803600MNBSP K7A801800MNBSP K7A803600M K7A801800 |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7B801825B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
|
| K7N801845B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7N801849B K7N803649B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM
256K X 36 ZBT SRAM, 3.5 ns, PQFP100
512K X 18 ZBT SRAM, 3.5 ns, PQFP100
|
Samsung semiconductor
|
| KM736V889 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736V890 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HIP5010 HIP5010IS HIP5010IS1 HIP5011 HIP5011IS HIP |
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN HB BASED PRPHL DRVR WITH PWM, PSSO7
Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器（同步半桥驱动器）
7V, 17A SynchroFETComplementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge
From old datasheet system
7V, 17A SynchroFET?Complementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge
7V/ 17A SynchroFET Complementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
