| PART |
Description |
Maker |
| HYB18T512161BF-26 HYB18T512161BF-28 |
512-Mbit x16 DDR2 SDRAM
|
http://
|
| HYB18T512400AF-3 HYB18T512400AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM
|
INFINEON[Infineon Technologies AG]
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| IS43DR81280 |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| HYMP564R72P8-E3_C4 HYMP125R72M4-E3 HYMP125R72M4-E3 |
240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver.
|
HYNIX[Hynix Semiconductor]
|
| IS46DR16320B-3DBLA2 IS46DR16320B-3DBLA1 IS46DR1632 |
512Mb (x8, x16) DDR2 SDRAM
512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solution...
Integrated Silicon Solu...
|
| HYS72T512420EFA HYS72T512420EFA-25F-C HYS72T512420 |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products
|
Qimonda AG
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
| M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| HYB25DC512160CE-5 HYB25DC512160CE-6 HYB25DC512160C |
512-Mbit Double-Data-Rate SDRAM
|
Qimonda AG
|
