PART |
Description |
Maker |
HYB18H512321BF-11/12/14 HYB18H512321BF-08/10 |
512-Mbit GDDR3 Graphics RAM
|
Qimonda
|
K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
ADV473 ADV473KP80 ADV473-15 |
CMOS 135 MHz True-Color Graphics Triple 8-Bit Video RAM-DAC CMOS 135MHz True-Color Graphics Triple 8-Bit Video RAM-DAC Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:17-55
|
Analog Devices, Inc.
|
HYE18M1G16 HYE18M1G160BF-6 HYE18M1G160BF-7.5 HYE18 |
1-Gbit x16 DDR Mobile-RAM
|
Qimonda AG
|
V23832-R111-M101 V23832-R311-M101 V23832-R511-M101 |
PAROLI 2 Tx AC, 1.6 Gbit/s Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.6 Gbit/s, multistandard electrical interface Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.6 Gbit/s, PAROLI 2 Tx AC/ 2.7 Gbit/s PAROLI 2 Tx AC/ 1.25 Gbit/s PAROLI 2 Tx AC/ 1.6 Gbit/s
|
Infineon Technologies AG
|
HY5DU283222Q HY5DU283222Q-45 HY5DU283222Q-55 HY5DU |
GDDR SDRAM - 128Mb 128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
HY5DS283222BF HY5DS283222BF-28 HY5DS283222BF-33 HY |
GDDR SDRAM - 128Mb 128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU283222F HY5DU283222F-26 HY5DU283222F-33 HY5DU |
GDDR SDRAM - 128Mb 128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
MT41LC256K32D4 |
Synchronous Graphics RAM
|
Micron Technology
|
NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
HM5283206FP-15 |
256K X 32 SYNCHRONOUS GRAPHICS RAM, 12 ns, PQFP100
|
|