| PART |
Description |
Maker |
| BF450 BF451 |
(BF450 / BF451) PNP Silicon RF Transistors
|
Siemens Semiconductors
|
| BF450 BF451 |
(BF450 / BF451) HF Silicon Planar Epitaxial Transistor
|
Philips Semiconductors
NXP
|
| AM29C833ASC |
600 MIL PLA SO GULL-WG CMOS SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, PDSO24
|
Advanced Micro Devices, Inc.
|
| 15-80-0109 0015800109 70567-0275 A-70567-0275 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| A-70567-0348 15-80-1201 0015801201 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 20 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 20 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0015800209 15-80-0209 A-70567-0280 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 20 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 20 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0015800149 15-80-0149 A-70567-0277 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 14 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 14 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0010897082 010-89-7082 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, Dual Row, Vertical, High Temperature, 8 Circuits, 0.38渭m (15渭") Gold (Au) Selective Plating, Tin (Sn) PC Tail Pla
2.54mm (.100) Pitch C-Grid? Breakaway Header, Dual Row, Vertical, High Temperature, 8 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, Tin (Sn) PC Tail Plating, 2.72mm (.107) PC Tail
|
Molex Electronics Ltd.
|
| IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE
16 A, 800 V, SILICON, RECTIFIER DIODE
16 A, 400 V, SILICON, RECTIFIER DIODE
25 A, 200 V, SILICON, RECTIFIER DIODE
25 A, 1000 V, SILICON, RECTIFIER DIODE
16 A, 1200 V, SILICON, RECTIFIER DIODE
16 A, 100 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
| RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
|
