PART |
Description |
Maker |
TGS2306-EPU |
High Power DC - 18GHz SPDT FET Switch
|
TriQuint Semiconductor,Inc.
|
CCR-33S3O-T CCR-33 CCR-33S1C-N CCR-33S1C-R CCR-33S |
Miniature DC-18GHz SPDT Switch 微型DC - 18GHz SPDT开
|
Teledyne Technologies, Inc. Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
PE6106 |
N MALE HIGH POWER TERMINATION FREQUENCY RANGE: DC TO 18GHz
|
Pasternack Enterprises, Inc.
|
PE4230 PE4230-EK 4230-52 4230 4230-00 4230-21 4230 |
SPDT High Power UltraCMOSRF Switch SPDT High Power UltraCMOS RF Switch SPDT High Power UltraCMOS⑩ RF Switch
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
TPD02-06G18S |
18GHz 2-Way Power Divider
|
Transcom, Inc.
|
TPD02-0.5G18S |
0.5-18GHz 2-Way Power Divider
|
Transcom, Inc.
|
PDW06407 |
2-18GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
PDW06089 |
6-18GHz 4-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|