| PART |
Description |
Maker |
| IS42S16100 IS42S16100-7T |
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
|
ICS
|
| IS42S16100C1-7B IS42S16100C1-7BI IS42S16100C1-7BL |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| IS42S16100A1-10T |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
| M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM
4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp)
4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位（为512k × 8），5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| TC58FVB321 TC58FVXB-70 TC58FVXB-10 TC58FVT321-70 |
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32兆位分 200万6位）的CMOS闪存
CAT5E PATCH CORD 100MHZ 7 FOOT BLACK 32兆位分 200万6位）的CMOS闪存
32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| IS42S16400J-6TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS45S16400F |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution
|
| IS45S16400E |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution
|
| IS42S16400D-6T IS42S16400D-6TL IS42S16400D-7TI IS4 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| 42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
