| PART |
Description |
Maker |
| IS43DR32800A-37CBL IS43DR32800A-37CBLI IS43DR32800 |
256Mb DDR2 DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68
1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92
1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
| EM48AM1644VBB-8FE EM48AM1644VBC EM48AM1644VBC-75F |
256Mb (4M×4Bank×16) Synchronous DRAM
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM
256Mb (4M】4Bank】16) Synchronous DRAM
|
http://
Eorex Corporation
|
| EM488M3244VBB EM48AM3244VBB-75FE EM48AM3244VBB-7FE |
256Mb (2M?4Bank?32) Synchronous DRAM
256Mb (2M隆驴4Bank隆驴32) Synchronous DRAM
256Mb (2M】4Bank】32) Synchronous DRAM
256Mb (2M×4Bank×32) Synchronous DRAM
|
List of Unclassifed Manufacturers
ETC
Eorex Corporation
http://
|
| HY5PS561621BFPC4I HY5PS561621BFPE3I HY5PS561621BFP |
256Mb DDR2 SDRAM
|
Hynix Semiconductor
|
| HY5PS561621AFP-C4 HY5PS561621AFP-E3 HY5PS561621AFP |
256Mb DDR2 SDRAM
|
Hynix Semiconductor
|
| HYS72T512122HFN-3.7-A HYS72T512022HFN-3.7-A |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM 512M X 72 DDR DRAM MODULE, PDMA240
|
Qimonda AG
|
| HYS64T64020GDL-3.7-A HYS64T64020GDL-5-A HYS64T3200 |
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 2Bank; available 3Q/04
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 2Bank; available 3Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 4300 4-4-4 1Bank; available 3Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 3200 3-3-3 1Bank; available 3Q/04
|
Infineon
|
| H57V2582GTR-60C H57V2582GTR-60L H57V2582GTR-75C H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| EDE2108ABSE EDE2108ABSE-5C-E EDE2108ABSE-6E-E EDE2 |
2G bits DDR2 SDRAM 512M X 4 DDR DRAM, 0.45 ns, PBGA68
2G bits DDR2 SDRAM 256M X 8 DDR DRAM, 0.4 ns, PBGA68
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 |
256Mb Network-DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IS42S32800D-6TL IS42S32800D-6TLI IS45S32800D-6BLA1 |
8M x 32 256Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
