| PART |
Description |
Maker |
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| GM71C16163CCL GM71S16163CCL GM71CS16400CLJ-6 GM71C |
1Mx16|5V|4K|5/6|FP/EDO DRAM - 16M
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Electronic Theatre Controls, Inc.
Rochester Electronics, LLC
Integrated Silicon Solution, Inc.
|
| HY51V65404ASLTC50 |
x4 EDO Page Mode DRAM
|
|
| IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| GM71V4403ELJ-80 GM71V4403ET-80 GM71V4403ET-70 GM71 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
LG, Corp.
Littelfuse, Inc.
|
| GM71VS65163CLT-6 GM71VS65163CLJ-5 GM71VS65163CLJ-6 |
x16 EDO Page Mode DRAM
|
|
| IS41C44002C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
| UPD4217405G3-50 UPD42S17405G3-50 UPD4217405G3-70 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
| HM5165405AUTT-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Elpida Memory, Inc.
|
| HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 |
x16 EDO Page Mode DRAM
|
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
