| PART |
Description |
Maker |
| HY29DS323 HY29DS322 HY29DS323BF-10 HY29DS322BF-12 |
EEPROM EEPROM
32 MEGABIT (4M X 8/2M X16) SUPER-LOW VOLTAGE, DUAL BANK, SIMULTANEOUS READ/WRITE, FLASH MEMORY
|
Hynix Semiconductor, Inc.
|
| E28F002BX-T70 PA28F200BX-T70 E28F002BX-B70 PA28F20 |
x8/x16 Flash EEPROM
x8 Flash EEPROM x8闪存EEPROM
|
Intel, Corp.
|
| LH28F160S5HB-L70 LH28F160S5HB-L10 LH28F160S5HD-L10 |
1M X 16 FLASH 5V PROM, 80 ns, PDSO56 0.600 INCH, PLASTIC, SSOP-56
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Sharp Electronics, Corp.
Sharp, Corp.
|
| HY29F800BT-55 HY29F800BR-90 HY29F800BT-70 HY29F800 |
x8/x16 Flash EEPROM
|
Hynix Semiconductor Inc.
|
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| AT49LV4096A-70CC AT49BV4096A-11CI AT49LV4096A-70RC |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Atmel, Corp.
|
| DP5Z4MW16PH3-12B DP5Z4MW16PH3-15B DP5Z4MW16PH3-20C |
x16 Flash EEPROM Module x16闪存EEPROM模块
|
Twilight Technology, Inc.
Electronic Theatre Controls, Inc.
Switchcraft, Inc.
|
| M39832 M39832NE 6468 M39832-B12WNE1T M39832-B12WNE |
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
