| PART |
Description |
Maker |
| PUMA2F4001I-17 PUMA2F4001I-15 PUMA2F4001M-15 PUMA2 |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Air Cost Control
|
| PUMA2E1000LM-90/X405 PUMA2E1000LI-70 PUMA2E1000I-7 |
x32 EEPROM Module X32号的EEPROM模块
|
PUI Audio, Inc.
|
| AS8E128K32Q-15/IT AS8E128K32Q-15/XT AS8E128K32Q-25 |
x32 EEPROM Module X32号的EEPROM模块
|
Maxim Integrated Products, Inc.
Advanced Analogic Technologies, Inc.
TE Connectivity, Ltd.
NXP Semiconductors N.V.
|
| HMF51232J4V-55 HMF51232J4V-70 HMF51232J4V-120 HMF5 |
FLASH-ROM MODULE 2MByte (512K x32-Bit) - 68-Pin JLCC
|
Hanbit Electronics Co.,Ltd
|
| HYCFL001-150 |
x8/x16 Flash EEPROM Module x8/x16闪存EEPROM模块
|
Lumex, Inc.
|
| PIC16F84AT-04I_PQTP PIC16F84AT-04I_PROM PIC16F84AT |
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single word instructions) CMOS Flash/EEPROM-based ...
18-pin Enhanced FLASH/EEPROM 8-bit Microcontroller
|
Microchip Technology
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
