| PART |
Description |
Maker |
| WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛?
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛?
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时0ns
|
White Electronic Designs Corporation
|
| KM23C16205DSG |
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM(16M(1Mx16 /512Kx32) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDI7F33512V EDI7F433512V |
512Kx32 Flash(512Kx32 闪速存储器)
4x512Kx32 Flash(4x512Kx32 ???瀛???ī
|
White Electronic Designs Corporation
|
| EDI7F433512C80BNC EDI7F433512C100BNC EDI7F433512C1 |
512Kx32 Flash
|
White Electronic Designs Corporation
|
| WS512K32NBV-17H2IE WS512K32NBV-15G2CE WS512K32NBV- |
512Kx32 3.3V SRAM MODULE
|
WEDC[White Electronic Designs Corporation]
|
| WD512K32NV-15H1C WD512K32NV-15H1MA WD512K32NV-20H1 |
512Kx32 SRAM 3.3V MULTICHIP PACKAGE
|
WEDC[White Electronic Designs Corporation]
|
| WSF41632-22H2CA WSF41632-22H2C WSF41632-22H2I WSF4 |
128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
|
WEDC[White Electronic Designs Corporation]
|
| WSF41632-22H2C WSF41632-22H2M WSF41632-22H2MA WSF4 |
128KX32 SRAM & 512Kx32 FLASH MIXED MODULE
|
White Electronic Designs Co...
|
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| EDI8F32512C EDI8F32512C-MM EDI8G32512C-MM |
512Kx32 Static RAM CMOS, High Speed Module(512Kx32高速CMOS静态RAM模块)
2-Phase, High Speed CCD Driver; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
200MHz Rail-to-Rail Amplifiers; Temperature Range: -40°C to 85°C; Package: 6-SOT-23 T&R
|
White Electronic Designs Corporation
|
| CYM1846PM-15C CYM1846PM-20C CYM1846PZ-20C CYM1846P |
512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, PSMA72 PLASTIC, SIMM-72
512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PSMA72 PLASTIC, SIMM-72
SRAM|512KX32|CMOS|SSIM|72PIN|PLASTIC
null : SRAM Modules
|
Cypress Semiconductor, Corp.
|
