| PART |
Description |
Maker |
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package
Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module
1600V high power thyristor module
1400V high power thyristor module
1200V high power thyristor module
High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
| TDA4817 TDA4817G Q67000-A8299 Q67000-A8298 |
PFC IC for High Power Factor and Acti...
From old datasheet system
Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 0.5 A POWER FACTOR CONTROLLER, PDIP8
Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 功率因数控制器IC，用于高功率因数，有源谐波滤
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| WSLT4026-15 |
Power Metal Strip? Resistors, High Temperature (275 °C),High Power, Low Value, Surface Mount, 4-Terminal
|
Vishay Siliconix
|
| MJW16206 ON2059 |
POWER TRANSISTORS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
High and Very High Resolution CRT Monitors
From old datasheet system
|
ON Semiconductor
|
| AWT6111 AWT6111_REV_2.0 |
The AWT6111 is a high power high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications.
From old datasheet system
Power Amplifiers
|
Anadigics Inc
|
| JYDC-7-1HP |
High Power Directional Coupler 50?/a> 30 to 500 MHz
From old datasheet system
High Power Directional Coupler 50з 30 to 500 MHz
High Power Directional Coupler 50 30 to 500 MHz
AC-DC Converter, 75 Watt Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 6.25, Package: U Bracket, Isolation(VDC): 3000, Operating Temp.: -25C to 50C, Low Ripple & Noise, High Efficiency up to 80%, Auto-Recovery, Single Outputs
|
http://
MINI[Mini-Circuits]
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| TA0012 |
New High Power, High Efficiency HBT GSM Power Amplifier
|
RFMD[RF Micro Devices]
|
| 2SJ114 |
HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER
|
Hitachi Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
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