PART |
Description |
Maker |
DPS1MX16MKH3-30C DPS1MX16MKH3-30B DPS1MX16MKH3-30M |
x16SRAM模块 x16 SRAM Module x16的SRAM模块
|
TE Connectivity, Ltd.
|
WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛? 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛? 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时5ns 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时0ns
|
White Electronic Designs Corporation
|
M68AR016DN70ZB1T M68AR016DN70ZB6T M68AR016DN70ZH1T |
1M X 16 STANDARD SRAM, 70 ns, PBGA48 16 MBIT (1M X16) 1.8V ASYNCHRONOUS SRAM 16 Mbit 1M x16 1.8V Asynchronous SRAM 16 MBIT (1M X16) 1.8V ASYNCHRONOUS SRAM Circular Connector; No. of Contacts:15; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:28-17 RoHS Compliant: No AB 7C 3#8 4#12 PIN RECP 1600万x16 1.8异步SRAM ER 12C 12#16 SKT RECP LINE 1600万x16 1.8异步SRAM AB 12C 12#16 SKT RECP 1600万x16 1.8异步SRAM
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
MB84VD22398EJ-90 MB84VD22398EJ-85 MB84VD2239XEJ-85 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM 2-Stacked MCP
|
SPANSION[SPANSION] Fujitsu
|
MB84SD23280FE-70 MB84SD23280E-70PBS MB84SD23280FA |
64M (X16) FLASH MEMORY 8M (X16) SRAM
|
SPANSION[SPANSION]
|
EDI8C32128C WS128K32-XXX EDI8C32128LP17EI |
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块(存取时5705555ns 128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块(存取时5705555ns 128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块(存取时57055555ns 128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块(存取时57205555ns 128Kx32 SRAM的模块(低功耗的CMOS28Kx32静态内存模块(存取时间15,17,20,25,35,45,55纳秒)) 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
|
White Electronic Designs Corporation TE Connectivity, Ltd.
|
LRS1387 |
64M (X16) FLASH 8M (X16) SRAM
|
Sharp Electrionic Components
|
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http:// STMicroelectronics
|
KM6164002A KM6164002AJ-1500 |
256K X 16 STANDARD SRAM, 15 ns, PDSO44 From old datasheet system x16 SRAM
|
Samsung
|
DS1220AB-200-IND DS1220Y DS1220Y-100 DS1220Y-120 D |
2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24 16K Nonovolatile SRAM From old datasheet system
|
Maxim Integrated Products, Inc. MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr] DALLAS[Dallas Semiconductor] http://
|
HY62LF16404D-DF HY62LF16404D-DFI HY62LF16404D-I HY |
x16 SRAM 256Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|