| PART |
Description |
Maker |
| 1MB30-060 |
Fuji Discrete Package IGBT
|
Fuji Electric
|
| 1MBH25D-120 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1MBH15-120 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1MBG10D-060 |
Fuji Discrete Package IGBT
|
Fuji Electric
|
| 1MBC15-060 |
Fuji Discrete Package IGBT
|
Fuji Electric
|
| 1MBC05-060 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4PSH71U IRG4PSH71UPBF |
99 A, 1200 V, N-CHANNEL IGBT
INSULATED GATE BIPOLAR TRANSISTOR
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRGBC30S |
600V Discrete IGBT in a TO-220AB package
|
International Rectifier
|
| IRGPH30S |
1200V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IRGBC40S |
600V Discrete IGBT in a TO-220AB package
|
International Rectifier
|
