| PART |
Description |
Maker |
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
X-Band Internally Matched FET
|
Eudyna Devices Inc
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| MGFK37V4045 K374045 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 5W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V4450A C394450A |
From old datasheet system
4.4~5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
4.4 - 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK38V2732 K382732 |
From old datasheet system
12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke
0.5-2.5 GHz Ultralinear Mixer w/LO Buffer
8.5 - 11 GHz 6-bit Phase Shifter
Low Noise Amp, SB
Gain Block
X-band Discrete Power pHEMT
Ku-band Discrete Power pHEMT
18mm HFET
24mm HFET
Cell-Band CDMA PA Module; 1-Bit
Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
