| PART |
Description |
Maker |
| LH-FSLH-S090C-0406A FSLH-S090C |
850 MHz - 950 MHz RF/MICROWAVE SPLITTER AND COMBINER, 1 dB INSERTION LOSS
2012 Size 850/950 MHz Chip Multilayer Splitter/Combiner
|
HITACHI METALS LTD
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
|
| GL480Q |
1.6 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
SHARP ELECTRONICS CORP
|
| GL620T |
1 ELEMENT, INFRARED LED, 950 nm
|
SHARP ELECTRONICS CORP
|
| 5202CS21 5202CS12 |
5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
| VSMS370009 VSMS3700-GS18 VSMS3700-GS08 |
Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Siliconix
|
| TSUS4400AS12Z |
TSUS4400 - Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Semiconductors
|
| TSTS7300 TSTS730008 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| SFH4301 Q62702-P5166 |
High-Speed Infrared Emitter (950 nm) in 3 mm Radial Package
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| Q67220-C1268 F0094U F0094V |
GaAs Infrared Light Emitting Diode (950 nm, 12 mil)
|
OSRAM GmbH
|
| CQY36N CQY36N08 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| SM09195-45LDL |
917-950 MHz 30 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| TSAL5300-GSZ TSAL5300 TSAL5300-FSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
