| PART |
Description |
Maker |
| FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International, Corp.
|
| DS1220Y-150-IND DS1220Y-200-IND DS1220Y-100-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1250W-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
3M Company
|
| DS1646L-120 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1230AB-150-IND DS1230Y-150-IND DS1230Y-70-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Epson ToYoCom, Corp.
Maxim Integrated Products, Inc.
|
| DS1650Y-70-IND DS1650Y-100-IND DS1650Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Bourns, Inc.
Maxim Integrated Products, Inc.
|
| DS1330BL-70-IND DS1330BL-100-IND DS1330YL-100 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| M41ST87YMX6F |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40Z300MQ |
NVRAM CONTROLLER for up to EIGHT LPSRAM
|
ST Microelectronics
|
