| PART |
Description |
Maker |
| 1N50 1N50L-TA3-T 1N50G-TA3-T |
1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 4N50 4N50L-TA3-T 4N50G-TA3-T 4N50L-TF3-T 4N50G-TF3 |
4 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MTW20N50E-D |
Power MOSFET 20 Amps, 500 Volts N-Channel TO-247
|
ON Semiconductor
|
| MTW14N50E-D |
Power MOSFET 14 Amps, 500 Volts N-Channel TO-247
|
ON Semiconductor
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| SDR955_3 SDR953_3 SDR953-3 SDR954_3 |
50 AMPS 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR955/3 SDR953/3 SDR954/3 SDR953-3 |
50 AMPS 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
Solid States Devices, Inc.
|
| NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
| NTD3055L170-1 NTD3055L170-1G NTD3055L170T4G NTD305 |
Power MOSFET 9.0 Amps, 60 Volts, Logic Level N-Channel DPAK
9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NTB75N03L09 NTB75N03L09G NTB75N03L09T4 NTP75N03L09 |
Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK
Power MOSFET 75 Amps, 30 Volts N-Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| BS170/D BS170-D |
Small Signal MOSFET 500 mAmps, 60 Volts N-Channel TO-92
Small Signal MOSFET 500 mAmps60 Volts
|
ON Semiconductor
|
