PART |
Description |
Maker |
AK5322048BW |
1,048,576 Word by 36 Bit CMOS Dynamic Random Access Memory 1,048,576 Word6位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
TC514402J TC514402J-10 TC514402J-80 TC514402Z-10 T |
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器 MB 3C 3#16 PIN RECP 1,048,576 × 4位动态随机存储器 MB 10C 10#20 PIN RECP 1,048,576 × 4位动态随机存储器
|
Toshiba, Corp. Maxim Integrated Products, Inc. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
AM29LV008T-100 AM29LV008B-100 AM29LV008B-120 AM29L |
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
|
Advanced Micro Devices
|
MSM531622F |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit MASKROM(1M字6位或2M字位掩膜ROM 1,048,576字16位或2097152字8位MASKROM00万字× 16位或200万字× 8位掩膜ROM的字 From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
MSM27C1602CZ |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM 1,048,576字16位或2097152字8位一次性可编程
|
OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
MSM56V16800D MSM56V16800DH |
2-Bank?1,048,576-Word?8-Bit Synchronous Dynamic RAM(2缁??,048,576瀛??浣??姝ュ???AM) 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2组,048,576字位同步动态RAM) 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD. OKI electronic componets
|
NM27C210 NM27C210QE150 NM27C210QE120 |
1,048,576-Bit (64K x 16) High Performance CMOS EPROM [Life-time buy] 1 /048 /576-Bit (64K x 16) High Performance CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008 |
From old datasheet system CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Semiconductor
|
GM71C4403DT-80 GM71C4403D GM71C4403D-60 GM71C4403D |
1,048,576 Words x Bit Organization
|
LG[LG Semicon Co.,Ltd.]
|
TC514402AP |
1,048,576 x 4 BIT DYNAMIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
M6MGB_T160S2BVP M6MGB E99003_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
|
Mitsubishi
|
M6MGB_T162S2BVP M6MGB E99005_A M6MGB162S2BVP M6MGT |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
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