| PART |
Description |
Maker |
| UPD44323362 UPD44323362F1-C40-FJ1 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC Corp.
|
| MC-4532CC727XFA-A75 MC-4532CC727XFA |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
| 48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
| PDPD431636L |
1M-Bit CMOS Synchronous Fast Static RAM(1M CMOS 同步快速静态RAM) 100万位CMOS同步快速静态RAM100万的CMOS同步快速静态内存）
|
NEC, Corp.
|
| MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
| LH5332600 LH5332600N LH5332600T |
CMOS 32M(4M X 8/2M X 16) Mask-Programmable ROM
CMOS 32M (4M X 8/2M X 16) MROM
|
Sharp Electrionic Components
Sharp Corporation
|
| THMY6432G1EG-80 |
32M Word x 64 Bit Synchronous DRAM Module(32Mx 64位同步动态RAM模块)
|
Toshiba Corporation
|
| MC-4532CC727PF-A75 MC-4532CC727 MC-4532CC727EF-A75 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| MC-4532CD647XFA-A75 MC-4532CD647XFA |
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
