| PART |
Description |
Maker |
| IS42S16800B IS42S16800B-6T IS42S81600B-6T IS42S168 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc.
|
| IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc.
|
| IS42S16800A1 IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M69KB128AA |
128 Mbit (8Mb x16) 1.8V Supply Burst PSRAM
|
STMicroelectronics
|
| M58LR128HC M58LR128HC70ZB5E M58LR128HC70ZB5U M58LR |
128 Mbit (x16, Mux I/O, Multiple Bank, Multilevel interface, Burst)
|
Numonyx B.V
|
| M58LW128H115ZA1 |
128 MBIT(8MB X16, UNIFORM BLOCK, BURST) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M58LR128F-ZB M58LR128F-ZBE M58LR128F-ZBF M58LR128F |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| M58LR128FB85ZB6T |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M30L0R7000XX M30L0R7000B0 M30L0R7000B0ZAQ M30L0R70 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
