| PART |
Description |
Maker |
| LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 |
4MEG (524288words x 8bit) flash memory
4 MEG (524288 words x 8 bits) Flash Memory
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
| D2364 UPD2364 UPD2364-30PC UPD2364-35PC UPD2364-45 |
Search -> UPD2364
ROM 8192 words / 8-Bit
READ ONLY MEMORY 8192 WORDS, 8BITS/WORD
|
NEC Electronics
NEC Corp.
|
| HN27C4000G-15 HN27C4000G-10 HN27C4000G-12 HN27C400 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
| M5M5T5636GP M5M5T5636GP-20 M5M5T5636GP-22 M5M5T563 |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5T5636UG |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| K4C89323AF-GCF5 K4C89323AF-GCF6 K4C89323AF-GCFB K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
| M5M54R08AJ-10 M5M54R08AJ-12 M5M54R08AJ-15 D99020 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5Y5636TG-20 M5M5Y5636TG-22 M5M5Y5636TG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5V5636GP-16 M5M5V5636GP16 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5V408BFP M5M5V408BTP-85LW M5M5V408BKR-70HI |
512K X 8 STANDARD SRAM, 85 ns, PDSO32
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
