| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
CONNECTOR ACCESSORY
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M52D32321A-10BG M52D32321A-7.5BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| K4M283233H K4M283233H-FG60 K4M283233H-FG75 K4M2832 |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Samsung semiconductor
|
| KM432D2131 |
512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM
|
Samsung Semiconductor
|
| GS8150F32 |
16Mb12K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology
|
| K4M513233C-SDF75 K4M513233C-SDG75 K4M513233C-SN7L |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
4M X 32BIT X 4 BANKS MOBILE SDRAM IN 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
| W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM
512K x 4 BANKS x 32 BITS SDRAM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
| HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY5 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
