| PART |
Description |
Maker |
| BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFS17P Q62702-F940 BFS17PQ62702-F940 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
CAP 15000PF X7R 250VAC X2 2220
TRANSISTOR UHF BIPOLAR BREITBAND
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC5212 |
Small Signal Transistor
Low collector saturation voltage VCE(sat)=0.2V typ. High collector current ICM=1A.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| HC05 MC68HC705X32 |
Bipolar Transistor; Transistor Polarity:Dual P Channel; Power Dissipation:20W; DC Current Gain Min (hfe):25; Collector Current:1A; DC Current Gain Max (hfe):200; Power (Ptot):20W
HCMOS microcontroller unit
|
Motorola, Inc.
|
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| BFS481 Q62702-F1572 |
From old datasheet system
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
