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FQI22N30 - TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263 300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)

FQI22N30_1066278.PDF Datasheet


Part No.	FQI22N30
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 300V V(BR)DSS \| 21A I(D) \| TO-263 300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)
File Size	729.00K / 9 Page
Maker	Fairchild Semiconductor Corporation
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Full text search : TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263 300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)

Product Description search : TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 21A I(D) | TO-263 300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOS场效应管)

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