PART |
Description |
Maker |
SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
2SJ517 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ518 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ548 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ541 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
TPC8407 |
MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
|
Toshiba Semiconductor
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SK3397 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
|
TOSHIBA[Toshiba Semiconductor]
|
TPC8113 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Corporation
|
TPCS8101 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
TPC8111 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Corporation
|