| PART |
Description |
Maker |
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C800-100B1TR M27C800-100B6TR M27C800-100F1TR M2 |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
64K (8K x 8) UV EPROM and OTP ROM
|
意法半导
STMicroelectronics
ST Microelectronics
|
| M27C322 M27C322-100F1 M27C322-100F3 M27C322-100F6 |
32 Mbit 2Mb x16 UV EPROM and OTP EPROM 32兆位存储器的2Mb x16紫外线和OTP存储
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W201 |
2Mbit (256Kb x 8) Low Voltage OTP EPROM(2Mb低压OTP EPROM)
|
意法半导
|
| M27W401-80B6 |
4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27W80106 M27W801-200N6TR M27W801 M27W801-100B6TR |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27C801 4377 |
8 Mbit (1Mb x8) UV EPROM and OTP EPROM
From old datasheet system
|
STMicro
|
| 27C4001 M27C4001 M27C4001-10B1 M27C4001-10B1TR M27 |
From old datasheet system
4 Mbit (512Kb x 8) UV EPROM and OTP EPROM
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM
|
ST Microelectronics
STMicroelectronics
|
| C30997-050 C30997-250 |
512 KBIT (64KB X8) UV EPROM and OTP EPROM 光电
|
TE Connectivity, Ltd.
|
| M27C322 |
32 MBIT (2MB X16) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
