PART |
Description |
Maker |
K7N161845M K7N163645M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM 512Kx36 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7N163601M K7N161801M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG[Samsung semiconductor]
|
K7N163645MK7N161845M |
512Kx36 & 1Mx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36 512Kx36 & 1Mx18 QDR II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IS61QDPB451236A |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
K7M161835B |
512Kx36 & 1Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
K7Q163664B10 K7Q161864B |
512Kx36 & 1Mx18 QDRTM b4 SRAM
|
Samsung semiconductor
|
KM718V089 KM736V989 |
512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7M161825M K7M163625M |
512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7I163682B06 K7I161882B |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7J163682B K7J161882B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7K1636T2C K7K1618T2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|