| PART |
Description |
Maker |
| BAS31 |
0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Dual In-Series General-Purpose Controlled-Avalanche Diode
|
VISHAY SEMICONDUCTORS
|
| BY9318 BY9300 BY9304 BY9306 BY9308 BY9310 BY9312 B |
Fast high-voltage soft-recovery controlled avalanche rectifiers 0.01 A, 8400 V, SILICON, SIGNAL DIODE
Fast high-voltage soft-recovery controlled avalanche rectifiers 0.005 A, 11200 V, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BYX103G BYX101 BYX101G BYX102G BYX104G BYX103GT/R |
0.31 A, 10000 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
High-voltage soft-recovery controlled avalanche rectifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BYD11 BYD11D BYD11G BYD11J BYD11K BYD11M |
Controlled avalanche rectifiers
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 1N5059 1N5061 |
Controlled avalanche rectifiers
|
NXP
|
| SKNA202 SKNA202_36 SKNA202_40 SKNA202_42 SKNA202_4 |
Avalanche Diode 200 A, 4600 V, SILICON, RECTIFIER DIODE
Avalanche Diode 200 A, 3600 V, SILICON, RECTIFIER DIODE
|
Semikron International
|
| BY627 |
Controlled Avalanche Rectifier Diodes
|
Philips
|
| BYX56-1000 BYX56-1200 BYX56-1400R BYX56-600 BYX56- |
CONTROLLED AVALANCHE RECTIFIER DIODES
|
New Jersey Semi-Conduct...
|
| BAS35 BAS31 |
General Purpose Controlled Avalanche Diodes
|
Guangdong Kexin Industrial Co.,Ltd
|
| BYD17DA BYD17JA BYD17GA BYD17KA BYD17MA |
GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS
|
EIC discrete Semiconductors
EIC discrete Semiconduc...
|
| 1N5062 1N5059 1N5059_1 1N5060 1N5061 |
From old datasheet system
Controlled avalanche rectifiers
|
Philips
|
