| PART |
Description |
Maker |
| M45PE20 M45PE20-VMN6 M45PE20-VMN6G M45PE20-VMN6P M |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
From old datasheet system
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M25PE40 M25PE40-VMN6G M25PE40-VMN6P M25PE40-VMN6TG |
4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
|
Numonyx B.V
|
| M25PE10 M25PE10-VMN6G M25PE10-VMN6P M25PE10-VMN6TG |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
|
Numonyx B.V
|
| M25PE16 |
16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
|
Numonyx B.V
|
| M45PE16 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M45PE10 |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus I
From old datasheet system
|
STMicroelectronics
|
| M25PE40 M25PE40VMN6G M25PE40VMN6P M25PE40VMN6TG M2 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| 24C04A |
The 24C04A is a 4K bit Serial Electrically Erasable PROM. The 24C04A features an I2C™ compatible 2-wire serial interface bus and hardware write protection for the upper half of the block. The 24C04A has a page write capabil
|
Microchip
|
| X9279TB X9279TBI X9279TB-2.7 |
Single Digitally-Controlled (XDCP) Potentiometer 单数字控制（数字电位器）电位
IC,FLASH MEMORY,64 MB,120NS,3.0V,48 TSOP
AM29DL800 FLASH MEM 8MB 70NS TSOP-48
|
Xicor Inc.
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| PALCE22V10-15 PALCE22V1096 PALCE22V10-15KMB PALCE2 |
Flash Erasable, Reprogrammable CMOS PAL㈢ Device
Flash Erasable, Reprogrammable CMOS PAL? Device
Flash Erasable, Reprogrammable CMOS PAL垄莽 Device
|
Cypress Semiconductor
|
| PALCE20V8-10 PALCE20V8-15 PALCE20V8-25 PALCE20V8-5 |
Flash-Erasable Reprogrammable CMOS PAL? Device
Flash-Erasable Reprogrammable CMOS PAL垄莽 Device
Flash-Erasable Reprogrammable CMOS PAL㈢ Device
|
Cypress Semiconductor
|
