| PART |
Description |
Maker |
| FMM50-025TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
| FMM60-02TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
| IXTQ200N075T IXTH200N075T |
Preliminary Technical Information Trench Gate Power MOSFET
|
IXYS Corporation
|
| IXTP102N15T IXTA102N15T IXTQ102N15T IXTH102N15T |
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| CM200TU-12F |
240 x 128 pixel format, CFL Backlight with power harness
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| SFF80N10Z SFF80N10M |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET
|
http://
SSDI[Solid States Devices, Inc]
|
| CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts
128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
| CM75TU-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
