| PART |
Description |
Maker |
| TE28F016S5-110 PA28F004S5-120 PA28F004S5-85 PA28F0 |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 8 AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
| 28F320S3 DT28F320S3-140 GT28F320S3-140 TE28F320S3- |
WORD-WIDE FlashFile MEMORY FAMILY
Word-wide FlashFile memory. 32 Mbit, access speed 140 ns
|
Intel
|
| DT28F320S5-90 DT28F320S5-110 DT28F160S5-70 DT28F16 |
Word-wide FlashFile memory. 32 Mbit, access speed 90 ns
Word-wide FlashFile memory. 32 Mbit, access speed 110 ns
Word-wide FlashFile memory. 16 Mbit, access speed 70 ns
Word-wide FlashFile memory. 16 Mbit, access speed 100 ns
|
Intel
|
| CDP1852C_3 CDP1852D3 CDP1852_3 CDP18523 CDP1852CD3 |
High-Reliability Byte-Wide Input/Output Port
|
Intersil Corporation
|
| WM2613 WM2613IDT WM2613CDT |
BYTE-WIDE PARALLEL INPUT, 12-BIT VOLTAGE OUTPUT DAC
From old datasheet system
|
WOLFSON[Wolfson Microelectronics plc]
|
| BTS4141D Q67060-S6098 |
Smart High-Side Power Switch 1 Channel: 1 x 200m?/a>
Smart High Side Switches - 1x 200m? 12-45V P-TO-252
Smart High-Side Power Switch 1 Channel: 1 x 200mз
POWERLINE: RP15-S_DEW - 4:1 Wide Input Voltage Range- 15 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 82%
|
INFINEON[Infineon Technologies AG]
|
| P89LPC971FDH P89LPC972 |
8-bit microcontroller with accelerated two-clock 80C51 core 2 kB/4 kB/8 kB wide-voltage byte-erasable flash
|
NXP Semiconductors
|
| GT28F160B3-T120 GT28F160B3-T150 GT28F400B3-T120 GT |
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 智能3高级启动块字
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 1M X 16 FLASH 3V PROM, 150 ns, PBGA48
TRANSFORMER CURRENT 75.0 AMP 智能3高级启动块字
LEAD, N PLG-PLG 50R, 1.2M; Connector type A:N Plug; Connector type B:N Plug; Length, lead:1.2m; Cable type:RG213; Impedance:50R; Coaxial cable type:RG213 RoHS Compliant: Yes
|
http://
Intel, Corp.
ON Semiconductor
Intel Corp.
|
| NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位，2112 Byte/1056字的页面.8V/3VNAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| LC872G08A LC872G04A LC872G06A LC872G08A10 |
8K/6K/4K-byte ROM and 256-byte RAM integrated 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
