| PART |
Description |
Maker |
| CM600HG-90H |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM200HG-130H |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800E2Z-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM600HB-90H |
Single IGBTMOD?/a> HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD HVIGBT 600 Amperes/4500 Volts
Single IGBTMODHVIGBT 600 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM200HG-130H |
Single IGBTMOD HVIGBT Module 200 Amperes/6500 Volts
|
Powerex Power Semiconductor...
|
| QID3320002 |
Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| QID3310006 |
Dual IGBT HVIGBT Module 100 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| CM1800DY-34S |
Dual Half-Bridge IGBTMOD HVIGBT Series Module 1800 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
