PART |
Description |
Maker |
K4S280432A-TC_L75 K4S280432A-TC_L80 K4S280432A-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
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K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C |
64Mb(8Mx8) concurrent RDRAM From old datasheet system (MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM 18Mb(2Mx9) concurrent RDRAM
|
OKI[OKI electronic componets] OKI electronic components
|
MB84VD22387EJ-90-PBS MB84VD22396EJ-90-PBS MB84VD22 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM 32M的(x16)的闪存16M内存(x16)的SRAM接口的FCRAM 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM SPECIALTY MEMORY CIRCUIT, PBGA71 ER 9C 9#16 SKT RECP WALL SPECIALTY MEMORY CIRCUIT, PBGA71
|
Spansion Inc. Spansion, Inc.
|
MB84VD22281EA MB84VD22281EA-90-PBS MB84VD22281EE M |
32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM POT 2.0K OHM 1/4 SQ CERM SL MT 32M (X 8/X16) FLASH MEMORY & 8M (X 8/X16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71
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Fujitsu Component Limited. Fujitsu Limited Fujitsu, Ltd.
|
M36WT8B10ZA6T M36WT8B70ZA6T M36WT864T70ZA6T M36WT8 |
HEATSHRINK BLACK 4IN X 50FT 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product 64兆位4Mb的x16插槽,多银行,突发闪存和8兆位的SRAM12k x16,内存产品多
|
STMicroelectronics N.V. 意法半导
|
SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash 7.6 mm(0.3 inch) Micro Bright Seven Segment Displays CONNECTOR ACCESSORY LED Light Bars D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
MB84VD23381HJ-70 MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Advanced Micro Devices
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