| PART |
Description |
Maker |
| EUP3595QIR1 EUP3595JIR1 EUP3595 |
512K x 32, 3.3V, MCM, Async
CMOS 5.0V, High Speed Static RAM
512K x 32, 5V, MCM, Rad Tol, Async
Parallel White-LED Driver
|
德信科技股份有限公司
Eutech Microelectronics Inc
|
| 79C0408 79C0408RT2FH-15 79C0408RT2FK-15 79C0408RT2 |
4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 200 ns, DFP40
4 Megabit (512k x 8-bit) EEPROM MCM 512K X 8 EEPROM 5V MODULE, 120 ns, DFP40
4 Megabit EEPROM MCM
512K X 8 EEPROM 5V MODULE, 150 ns, DFP40
4 Megabit EEPROM MCM
|
Maxwell Technologies, Inc
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| LCL3212-L |
MCM LNA
|
RFHIC
|
| LCL1503-L |
MCM LNA
|
RFHIC
|
| LCL3504-L LCL1904-L |
MCM LNA
|
RFHIC
|
| 79LV0832RPQK-20 79LV0832RT1QK-25 79LV0832RT2QK-20 |
CB 6C 6#16 SKT RECP WALL
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 250 ns, QFP96
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 200 ns, QFP96
|
Maxwell Technologies, Inc
|
| 5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
16Megabit SRAM MCM 16Megabit的SRAM亿立方米
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Techno...
http://
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| GLM2121-L GBM1821-L GLM1521-L |
MCM Linear High Gain Linearity Module
|
RFHIC
|
| GBM2121-L GBM9021-L |
MCM Linear High Gain Linearity Module
|
RFHIC
|
|
