| PART |
Description |
Maker |
| BYM200B170DN2 |
IGBT-Modules
200 A, SILICON, RECTIFIER DIODE
|
eupec GmbH
INFINEON TECHNOLOGIES AG
|
| MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HU20140 HU20140R |
Ultrafast Recovery Modules
200 A, 400 V, SILICON, RECTIFIER DIODE
|
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| VID75-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE
150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| GP200MKS12 |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| SEMIX202GB128DS08 |
SPT IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
http://
|
| SEMIX453GB12T4S |
Trench IGBT Modules 685 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| SKM800GA125D |
Ultrafast IGBT Modules 760 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
