PART |
Description |
Maker |
MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE High Q Hyperabrupt Tuning Varactors L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
KV2161-00 KV2121 KV2121-00 KV2151-00 KV2131-00 KV2 |
C BAND, 4.9 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Microwave Hyperabrupt Junction
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
BBY66 BBY66-05W BBY66-02V BBY66-05 |
Silicon Tuning Diodes 硅调谐二极管 Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications
|
INFINEON[Infineon Technologies AG]
|
AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
ADVANCED SEMICONDUCTOR INC
|
GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|
Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管(Hyperabrupt交界调谐二极管频率线性调谐范 12五) Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62702-B918 BBY57-03W BBY5703W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) From old datasheet system
|
Siemens Group SIEMENS[Siemens Semiconductor Group]
|
Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BBY55-03W BBY5503W Q62702-B0911 |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS[Siemens Semiconductor Group] Infineon Siemens Group
|
ASI30300 |
SILICON HYPERABRUPT VARACTOR DIODE
|
ADVANCED SEMICONDUCTOR INC
|
MAVR-001320-1146FT MAVR-001330-1146FT MAVR-001340- |
Silicon Hyperabrupt Varactor Diode
|
M/A-COM Technology Solu...
|