PART |
Description |
Maker |
AM28F256 AM28F256-120EC AM28F256-120ECB AM28F256-1 |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
|
http:// SIEMENS AG
|
AM27C512-200DC AM27C512-200DCB AM27C512-200DE AM27 |
512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
Advanced Micro Devices
|
V29LC51000 |
512 KILOBIT 65,536 x 8 BIT 5 VOLT CMOS FLASH MEMORY 512 KILOBIT 65/536 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic, Corp. Mosel Vitelic Corp
|
AM28F512-120EC AM28F512-120ECB AM28F512-120EE AM28 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
AM27C512-255PC AM27C512-55PC5 AM27C512-200LIB AM27 |
512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns 512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns
|
Rochester Electronics
|
IDT728980 IDT728980J IDT728980J8 |
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 5.0V TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
|
IDT[Integrated Device Technology]
|
AM27C64 AM27C64-120 AM27C64-120DC AM27C64-120DCB A |
64 Kilobit (8 K x 8-Bit) CMOS EPROM Octal D-Type Flip-Flops With Clock Enable 20-SOIC 0 to 70 Octal D-Type Flip-Flops With Clock Enable 20-SO 0 to 70 Cable Ties; Pack Quantity:100; Dual 4-Bit Decade Counters 16-PDIP 0 to 70 Dual 4-Bit Decade Counters 16-SOIC 0 to 70 Dual 4-Bit Binary Counters 14-SOIC 0 to 70 Dual 4-Bit Binary Counters 14-SO 0 to 70 Dual 4-Bit Binary Counters 14-PDIP 0 to 70 Quad 2-input positive-NAND buffers with open collector outputs 14-SOIC 0 to 70 Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70 Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70 Octal D-Type Flip-Flops With Clock Enable 20-PDIP 0 to 70 8K X 8 UVPROM, 150 ns, CDIP28 Hex D-Type Flip-Flops with Clock Enable 16-PDIP 0 to 70 8K X 8 UVPROM, 200 ns, CDIP28 Hex D-Type Flip-Flops with Clock Enable 16-SOIC 0 to 70 8K X 8 UVPROM, 200 ns, CDIP28 Quadruple 2-Input Multiplexers With Storage 16-SOIC 0 to 70 8K X 8 UVPROM, 90 ns, CDIP28 64 Kilobit (8 K x 8-Bit) CMOS EPROM 64千比特(8亩8位)CMOS存储 64 Kilobit (8 K x 8-Bit) CMOS EPROM 64千比特(8亩8位)的CMOS存储 Hex D-Type Flip-Flops with Clock Enable 16-SO 0 to 70 8K X 8 OTPROM, 200 ns, PQCC32
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
DS2430AV DS2430AP DS2430AT DS2430AX |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS 256-Bit 1-Wire EEPROM
|
Toshiba, Corp. Dallas Semiconducotr Dallas Semiconductor
|
TC9WMB1FK |
1024-Bit (128 x 8 Bit) / 2048-Bit (256 x 8 Bit) 2-Wire Serial E2PROM
|
Toshiba Semiconductor
|
A29L400ATM-70F A29L400ATM-90IF A29L400ATM-70UF A29 |
ER 3C 3#12 PIN PLUG ER 48C 48#16 PIN RECP 12k × 8 256 × 16位的CMOS 3.0伏只,引导扇区闪 Replaced by PT78NR107,PT78ST107,PT78ST174 : 7.15Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 12k × 8 256 × 16位的CMOS 3.0伏只,引导扇区闪 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory 12k × 8 256 × 16位的CMOS 3.0伏只,引导扇区闪 Replaced by PT78ST105 : 5Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 12k × 8 256 × 16位的CMOS 3.0伏只,引导扇区闪 ER 48C 48#16 SKT RECP 12k × 8 256 × 16位的CMOS 3.0伏只,引导扇区闪 MS3106A16-10SW 12k × 8 256 × 16位的CMOS 3.0伏只,引导扇区闪 ER 8C 8#12 SKT RECP
|
http:// Sanyo Denki Co., Ltd. AMIC Technology, Corp. AMIC Technology Corporation
|
AM29F400BT-90FC AM29F400BT-90EIB AM29F400BT-90SE |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
|