PART |
Description |
Maker |
BCM2048 |
BLUETOOTH 2.0 EDR SINGLE-CHIP HCI SOLUTION WITH INTEGRATED FM RDS RADIO RECEIVER
|
Broadcom Corporation.
|
TDA7479 |
RADIO DATA SYSTEM (RDS) DEMODULATOR,CMOS,DIP,16PIN,PLASTIC From old datasheet system
|
ST Microelectronics
|
S1A0905X01 |
RDS (RADIO DATA SYSTEM) DEMODULATOR IC Data Sheet
|
Samsung Electronic
|
KDR8702H |
N-Ch RDS(ON) = 54m 3.6 A, 20 V RDS(ON) = 38m P-Ch RDS(ON) = 110 m
|
TY Semiconductor Co., Ltd
|
S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω)) N-Channel N沟道
|
NXP Semiconductors N.V. TT electronics Semelab Limited Seme LAB
|
AN7009S |
AM Tuner Power Single Chip IC for 3V Radio, Radio Cassette
|
Panasonic
|
ATR4262M1 ATR4262M1-PLQW |
Broadcast Radio Front-end IC for AM/FM/DRM/HD Radio
|
ATMEL Corporation
|