PART |
Description |
Maker |
S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc. Advanced Micro Devices, Inc. Spansion, Inc. http://
|
MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
LH28F320S5H-L |
32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M 2Mx16 / 4Mx8 )Boot Block 闪速存储器)
|
Sharp Corporation
|
W25Q80 W25Q16 W25Q32 |
8M-BIT, 16M-BIT AND 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
MBM29DL323BE-12TR MBM29DL324TE-12TR MBM29DL324BE-1 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation
|
Fujitsu Microelectronics
|
AT49SN6416T AT49SN3208T AT49SN6416T-90CJ |
AT49SN6416(T)/3208(T) Advance Information [Updated 3/02. 38 Pages] 64M bit and 32M. 1.8-Volt Burst and Page Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 90 ns, CBGA55
|
ATMEL CORP
|
K9F1208D0A K9F1208U0A K9F1216U0A |
(K9F1208x0A / K9F1216x0A) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
K9F5608UOC K9F5616DOC K9F5616UOC K9F5608QOC |
(K9F5608xOC / K9F5616xOC) 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
MC-222244AF9-B85X-BT3 MC-222244A-X |
MCP(32M-bit flash memory 4M-bit Low Power SRAM)
|
NEC
|
MC-222273F9-B85X-BT3 MC-222273-X |
MCP(32M-bit flash memory 8M-bit Low Power SRAM)
|
NEC
|
K9K1208Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
|