| PART |
Description |
Maker |
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| PMBTA44 |
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8140Z |
500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8115Z |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8115T08 |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8540T09 |
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| NE661M04-T2 NE661M04 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN硅射频晶体管，低噪声，高增益放大平引引脚薄型超小型，低电流模
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| 2SC5606-A 2SC5606-T1-A 2SC56061 2SC5606 2SC5606-T1 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 路 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 隆陇 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
ST Microelectronics
NEC
|
| MCR01MZPJ5R6 MCR01MZPJ823 MCR01MZPJ620 NESG3033M14 |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| PBSS4230PAN |
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
