| PART |
Description |
Maker |
| MT48V8M16LFF4 |
(MT48xxxMxxLFFx) SYNCHRONOUS DRAM
|
Micron Technology
|
| HIP5010 HIP5010IS HIP5010IS1 HIP5011 HIP5011IS HIP |
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN HB BASED PRPHL DRVR WITH PWM, PSSO7
Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器（同步半桥驱动器）
7V, 17A SynchroFETComplementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge
From old datasheet system
7V, 17A SynchroFET?Complementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge
7V/ 17A SynchroFET Complementary Drive Synchronous Half-Bridge
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| UPD4382322GF-A67 UPD4382362GF-A67 UPD4382162GF-A75 |
x32 Fast Synchronous SRAM
x16 Fast Synchronous SRAM
x18 Fast Synchronous SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
|
Lumex, Inc.
|
| IS61SF25616 IS61SF25616-10B IS61SF25616-10TQI IS61 |
x16 Fast Synchronous SRAM x16快速同步SRAM
x18 Fast Synchronous SRAM
256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
HIROSE ELECTRIC Co., Ltd.
ISSI[Integrated Silicon Solution, Inc]
|
| 74ACT11161N 74AC11161D |
5 V, synchronous presettable synchronous 4-bit bunary counter, asynchronous reset
|
Philips
|
| HEF40163 HEF40163B HEF40163BD HEF40163BF HEF40163B |
4-bit synchronous binary counter with synchronous reset
Hex D-type flip-flop
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| IS61LV6464 |
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
|
ICSI
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
