| PART |
Description |
Maker |
| PDV-P9004 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
| PDV-P9005 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
| PDV-P5001 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
| PDV-P9200 |
CdS Photoconductive Photocells
|
Advanced Photonix, Inc.
|
| P873 |
Photoconductive and Photovoltaic Cells
|
Hamamatsu Photonic Systems
|
| P79107 P2680-02 P2680-03 P2038-02 P2038-03 |
PbSe photoconductive detector
|
Hamamatsu Corporation
|
| VT935G |
PHOTOCONDUCTIVE CdS CELL
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| P2682-01 P2532-01 |
PbS photoconductive detector
|
HAMAMATSU[Hamamatsu Corporation]
|
| PDB-C113 |
Blue Enhanced Photoconductive Silicon Photodiode
|
Advanced Photonix, Inc.
|
| P2288-04NBSP P2288-03NBSP P2288-03 |
Photoconductive Infrared Sensor
From old datasheet system
|
Hamamatsu Corp
|
| P2750 P2750-06 P2750-08 P3257-30 P3257-31 P3981 P3 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
|
Hamamatsu Corporation
|
