| PART |
Description |
Maker |
| ABA3100S3TR |
1GHz Balanced Low Noise Linear Amplifier
|
Skyworks Solutions
|
| EL5191ACSZ EL5191ACW-T7A EL5191ACWZ-T7 EL5191 EL51 |
1GHz Current Feedback Amplifier with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO6
1GHz Current Feedback Amplifier with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
Circular Connector; No. of Contacts:55; Series:JTP02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-35
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),680A I(T),TO-200AC RoHS Compliant: Yes
|
Intersil, Corp.
Intersil Corporation
|
| HA3004 |
3.1GHz - 3.5GHz Low Noise Amplifier
|
HBH Microwave GmbH
|
| EL5191 EL5191A |
Op Amp, 1GHz, Current Feedback Amplifier, with Enable
|
Intersil
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| RFDA0066 RFDA0066PCK-410 RFDA0066SQ RFDA0066TR13 R |
DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 5MHz TO 1GHz, 12-BIT 0.5dB LSB CONTROL
|
RF Micro Devices
|
| RF6100-4PCBA RF6100-4 |
3 V 1900 MHz Linear Power Amplifier Module
3V 1900MHZ LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2218UK |
CAT6 SOL PC PVC WHI 50FT PVC SOLID PATCH CORD UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
Seme LAB
|
