| PART |
Description |
Maker |
| TN1163 |
Description of WLCSP for microcontrollers and recommendations for use
|
STMicroelectronics
|
| AN1235 |
FLIP-CHIP CSP: PACKAGE DESCRIPTION AND RECOMMENDATIONS FOR USE
|
SGS Thomson Microelectronics
|
| AN-902 |
Twisted Pair FDDI Magnetics Overview and Recommendations
|
http://
|
| AN1547 |
FLIP CHIP 170MICRONSM RECOMMENDATIONS FOR AUDIO POWER AMPLIFIERS
|
SGS Thomson Microelectronics
|
| 0500DP44A1215 |
1200 /1200 MHz Diplexer (BPF/BRF)
|
Johanson Technology Inc.
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| SDR4512M |
45 AMP 1200 VOLTS 80 nsec RECTIFIER 45 A, 1200 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid State Devices, Inc.
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| CD411230 CD411630 |
Dual Diode 30 Amperes/1200-1600 Volts
Dual Diode POW-R-BLOK Modules(30 Amperes/1200-1600 Volts) 30 A, 1200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM1200HA-24J |
Single IGBTMOD?H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD⑩ H-Series Module 1200 Amperes/1200 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| TB520-XX TB502 TB502-3X |
Test Board for chip evaluation and Layout recommendations
|
PLL[PhaseLink Corporation]
|
