| PART |
Description |
Maker |
| HY5DW283222AF HY5DW283222AF-22 HY5DW283222AF-25 HY |
GDDR SDRAM - 128Mb
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| HYB39S512400AT HYB39S512400ATL HYB39S512XX0ATL HYB |
SDRAM Components - 512Mb (64M x 8) PC133 3-3-3
SDRAM Components - 512Mb (128M x 4) PC133 3-3-3
SDRAM Components - 512Mb (32M x 16) PC133 3-3-3
512-Mbit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| EBS51RC4ACFC-7A EBS51RC4ACFC EBS51RC4ACFC-75 |
512MB Registered SDRAM DIMM 512MB的注册SDRAM的内
512MB Registered SDRAM DIMM 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
| HYS64D64020GBDL-8-B HYS64D64020GBDL HYS64D64020GBD |
DDR SDRAM Modules - 512Mb (64Mx64) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank, FBGA based
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| K4D263238I-VC |
128M-Bit GDDR SDRAM
|
Samsung Electronics
|
| HY5DV281622DTP HY5DV281622DTP-33 HY5DV281622DTP-36 |
128M(8Mx16) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DS283222BF-28 HY5DS283222BFP-28 HY5DS283222BF-4 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
http://
|
| HY5DW113222FMP-2 HY5DW113222FMP-22 HY5DW113222FMP- |
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| EBE51UD8AEFA-5C-E EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) 512MB的无缓冲DDR2 SDRAM DIMM内存400字64位，1个等级）
|
Elpida Memory, Inc.
|
