| PART |
Description |
Maker |
| TS1GJF2A |
1GB USB2.0 JetFlash垄莽2A
1GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
Transcend Information. ...
|
| DOM40KV032 HFDOM40KB016 HFDOM40KVXXX |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
| HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3. |
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
|
Infineon
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| HY27UA081G1M HY27SA161G1M HY27SA081G1M |
NAND Flash - 1Gb
|
Hynix Semiconductor
|
| TS1GJF110 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| H5PS1G63EFR |
1Gb DDR21 SDRAM
|
hynix
|
| QLX111GRX |
11.1Gb/s Lane Extender
|
Intersil Corporation
|
| QLX111RIQT7 |
11.1Gb/s Lane Extender
|
Renesas Electronics Corporation
|
| H5TC1G43TFR H5TC1G83TFR |
1Gb DDR3L SDRAM
|
Hynix Semiconductor
|
| TS1GJF130 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| ISL36111 ISL36111DRZ-T7 ISL36111DRZ-TS |
11.1Gb/s Lane Extender
|
Intersil Corporation
|
