| PART |
Description |
Maker |
| S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
|
Cypress Semiconductor
|
| CY14B104LA |
4-Mbit (512 K X 8/256 K X 16) nvSRAM
|
Cypress Semiconductor
|
| CY7C1361C-133AJXCT |
9-Mbit (256 K 36/512 K 18) Flow-Through SRAM
|
Cypress
|
| CY7C1367C-166AXC |
9-Mbit (256 K × 36/512 K × 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| M29W400DB55M1 M29W400DB55M1E M29W400DB55M1F M29W40 |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| M29W400DB55N1 M29W400DB55N1E M29W400DB55N1F M29W40 |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| IDT7202 IDT7200L12J IDT7200L12J8 IDT7200L12SO IDT7 |
1K x 9 AsyncFIFO, 5.0V
512 x 9 AsyncFIFO, 5.0V
256 x 9 AsyncFIFO, 5.0V
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9 and 1,024 x 9
|
IDT
|
