| PART |
Description |
Maker |
| 2SC3114 |
NPN Epitaxial Planar Silicon Transistors for High-VEBO, AF Amp Applications(用于高发射级电压AF放大器应用的NPN硅外延平面型晶体
|
Sanyo Electric Co.,Ltd.
|
| 2SA1246 2SC3114 |
NPN Epitaxial Planar Silicon Transistors High-Vebo, AF Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2SC4446 |
Very small-sized package High VEBO.Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| ASI10599 HF100-12 |
NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
|
| ISL6228HRTZ ISL6228HRTZ-T ISL6228IRTZ-T |
High-Performance Dual-Output Buck Controller for Notebook Applications; Temperature Range: -40°C to 85°C; Package: 28-TQFN T&R DUAL SWITCHING CONTROLLER, 600 kHz SWITCHING FREQ-MAX, PQCC28
|
Intersil, Corp.
Intersil Corporation
|
| FC120 |
High-Frequency General-Purpose Amp/ Differential Amp Applications
High-Frequency General-Purpose Amp, Differential Amp Applications
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| 2SC4854 2SC4854-5 2SC4854-4 |
晶体管|晶体管|叩| 6V的五（巴西）总裁| 15mA的一c）|36AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
Low-Voltage Low-Current High-Frequency Amp Applications
Low-Voltage, Low-Current High-Frequency Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SA1815 2SA18154 2SA18153 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-236 晶体管|晶体管|进步党| 15V的五（巴西）总裁| 50mA的一（c）|36
FM,RM,MIX,IF Amp, High-Frequency General-Purpose Amp Applications
|
Coilcraft, Inc.
NXP Semiconductors N.V.
SANYO[Sanyo Semicon Device]
|
| 2SC2344 2SA1011 |
High-Voltage Switching/ AF Power Amp/ 100W Output Predriver Applications
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications 高压开关，自动对焦功率放大器，100W的输出预驱动器应
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| ASI10685 ULBM45 ASI10653 TVU150A |
NPN Silicon RF Power Transistor(Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2SA1688 |
High-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
